Journal Papers

Key:  * Inter-group collaboration; + International collaboration; ^ Collaboration with other UK group

2024

  • Chen M, Wang Y, Yao C, Wonfor A, Yang S, Penty R, and Cheng Q (2024). “I/O-efficient iterative matrix inversion with photonic integrated circuits”, Nature Communications, 15, 5926. DOI: 10.1038/s41467-024-50302-3
  • +Yao C, Xu K, Lin T, Ma J, Yao C, Bao P, Shi Z, Penty R, and Cheng Q, “Benchmarking reconstructive spectrometer with multi-resonant cavities”, ACS Photonics, 2024, 11, 9, 3730-3740. DOI: 1021/acsphotonics.4c00915
  • +Liu S, Ratiu B, Jia H, Yan Z, Wong K, Martin M, Tang M, Baron T, Liu H and Li Q (2024). “Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon”, Phys. Lett. 125, 082102. DOI: 10.1063/5.0219507
  • +Xu B, Jin C, Park J, Liu H, Lin X, Cui J, Chen D and Qiu J (2024). “Emerging near‐infrared luminescent materials for next‐generation broadband optical communications”, InfoMat, DOI: 10.1002/inf2.12550
  • ^Yu X, Jia H, Yang J, Masteghin M, Beere H, Mtunzi M, Deng H, Huo S, Chen C, Chen S, Tang M, Sweeney S, Ritchie D, Seeds A and Liu H (2024). “Effects of phosphorous and antimony doping on thin Ge layers grown on Si”, Scientific Reports,volume 14, Article number: 7969. DOI: 1038/s41598-024-57937-8
  • +Cao V, Pan S, Wu D, Zhang H, Tang M, Seeds A, Liu H, Xiao X and Chen S (2024). “A novel bidirectionally operated chirped quantum-dot based semiconductor optical amplifier using a dual ground state spectrumAPL Photonics9, 046110. DOI: 1063/5.0194677
  • +Mtunzi M, Jia H, Hou Y, Yu X, Zeng H, Yang J, Yan X, Skandalos I, Deng H, Park J, Li W, Li A, Hajraoui K, Ramasse Q, Gardes F, Tang M, Chen S, Seeds A and Liu H (2024). “High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy”  Phys. D: Appl. Phys.57 255101. DOI: 10.1088/1361-6463/ad31e0
  • *Maglio B, Jarvis L, Tang M, Liu H and Smowton P (2024). “Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devicesOptical and Quantum Electronics 56 (4), 687. DOI: 1007/s11082-024-06362-2
  • +Papatryfonos K, Girard J, Tang M, Deng H, Seeds A, David C, Rodary G, Liu H and Selviah D (2024). “Low‐Defect Quantum Dot Lasers Directly Grown on Silicon Exhibiting Low Threshold Current and High Output Power at Elevated Temperatures”, Photonics Res., 2400082. DOI: 10.1002/adpr.202400082
  • *Deng H, Park J, Yu X, Liu Z, Jia H, Zeng H, Yang J, Pan S, Chen S, Seeds A, Tang M, Smowton P and Liu H (2024). “3 µm InAs/GaAs quantum‐dot lasers with p‐type, n‐type, and co‐doped modulation”, Adv. Physics Res., 2400045. DOI: 10.1002/apxr.202400045
  • *Maglio B, Jarvis L, Tang M, Liu H and Smowton P (2024). "Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices", Optical and Quantum Electronics, 56, 687(2024). DOI: 10.1007/s11082-024-06362-2

2023

  • Noori Y, Skandalos I, Yan X, Zhelev N, Hou Y, and Gardes F (2023). Wafer Bonding for Processing Small Wafers in Large Wafer Facilities, IEEE Transactions on Components, Packaging and Manufacturing Technology, pp. 1–1, 2023, DOI: 10.1109/TCPMT.2023.3341329.
  • +Ma J, Zhou T, Tang M, Li H, Zhang Z, Xi X, Martin M, Baron T, Liu H, Zhang Z, Chen S, & Sun X (2023). Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon”. Light: Science and Applications12, 255 (2023). DOI: 10.1038/s41377-023-01290-4
  • ^Dang M, Deng H, Huo S, Juluri R, Sanchez AM, Seeds A, Liu H, & Tang M (2023). “The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates”. Journal of Physics D: Applied Physics, 56 (40), Article 405108. DOI: 10.1088/1361-6463/ace36d
  • +Albeladi F, Gillgrass SJ, Nabialek J, Mishra P, Forrest R, Albiladi T, Allford CP, Deng H, Tang M, Liu H, Shutts S, & Smowton PM (2023). Design and Characterisation of Multi-Mode Interference Reflector Lasers for Integrated Photonics. Journal of Physics D: Applied Physics, 56 (38), Article 384001. DOI:10.1088/1361-6463/acdb80
  • *Hou Y, Skandalos I, Tang M, Jia H, Deng H, Yu X, Noori Y, Stathopoulos S, Chen S, Liu H, Seeds A, Reed G, & Gardes F (2023). “Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration”. Journal of Luminescence, 258, 119799. DOI: 10.1016/j.jlumin.2023.119799
  • +Cao V, Pan S, Fan Y, Wu D, Tang M, Seeds A, Liu H, Xiao X, & Chen S (2023). “Distortion-free amplification of 100 GHz mode-locked optical frequency comb using quantum dot technology”. Optics Express, 31 (11) pp. 18147-18158. DOI: 10.1364/OE.486707
  • Yu X, Jia H, Dear C, Yuan J, Deng H, Tang M, & Liu H (2023). Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications. Journal of Physics D: Applied Physics, 56 (28), Article 285101. DOI: 10.1088/1361-6463/acc875
  • +Li H, Tang M, Zhou T, Xie W, Li R, Gong Y, Martin M, Baron T, Chen S, Liu H, and Zhang Z, (2023) "Monolithically integrated photonic crystal surface emitters on silicon with a vortex beam by using bound states in the continuum," Optics Letters. 48, 1702-1705. DOI: 10.1364/OL.484472
  • +Jia H, Yu X, Zhou T, Dear C, Yuan J, Tang M, Yan Z, Ratiu BP, Li Q, Seeds A, Liu H, & Chen S (2023). Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrateApplied Physics Letters122(11). DOI: 10.1063/5.0142391
  • +Yao C, Xu K, Zhang W, Chen M, Cheng Q, & Penty R. (2023). Integrated reconstructive spectrometer with programmable photonic circuits. Nature Communications, 14(1), 6376. DOI: 10.1038/s41467-023-42197-3
  • +Yao C, Chen M, Yan T, Ming L, Cheng Q, & Penty R (2023). Broadband picometer-scale resolution on-chip spectrometer with reconfigurable photonics. Light: Science & Applications, 12(1), 156. DOI: 10.1038/s41377-023-01195-2
  • +Leitenstorfer A, Moskalenko A, Kampfrath T, Kono J, Castro-Camus E, Peng K, Qureshi N, Havenith M, Hough C, Joyce H, Padilla W, Zhou B, Kim K, Zhang X, Jespen P, Dhillon S, Vitiello M, Linfield E, Davies A, Hoffmann M, Lewis R, Tonouchi M, Klarskov P, Seifert T, Gerasimenko Y, Mihailovic D, Huber R, Boland J, Mitrofanov O, Dean P, Ellison B, Huggard P, Rea S, Walker C, Leisawitz D, Gao J, Li C, Chen Q, Valusis G, Wallace V, Pickwell-MacPherson E, Shang X, Hesler J, Ridler N, Renaud C, Kallfass I, Nagatsuma T, Zeitler J, Arnone D, Johnston M, Cunningham J (2023). "The 2023 Terahertz Science and Technology Roadmap". Journal of Physics D: Applied Physics, 56 (22). DOI: 10.1088/1361-6463/acbe4c
  • *Hou Y,  Skandalos I, Tang M, Jia H, Deng H, Yu X, Noor Y, Stathopoulos S, Chen S, Liu H, Seeds A, Reed G and Gardes F (2023). "Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration", Journal of Luminescence, Volume 258, June 2023, 119799. DOI: 10.1016/j.jlumin.2023.119799
  • +Guo D, Huang J, Benamara M, Mazur Y, Deng Z, Salamo G, Liu H, Chen B and Wu J (2023). "High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon", IEEE Journal of Quantum Electronics, vol. 59, no. 2, pp. 1-6, April 2023, Art no. 2300106. DOI: 10.1109/JQE.2023.3238754
  • Yang J, Tang M, Chen S and Liu H (2023). "From past to future: on-chip laser sources for photonic integrated circuits", Light, Science & Applications, 15 Jan 2023, 12(1):16.  DOI: 10.1038/s41377-022-01006-0

2022

  • +Li A, Yao C, Xia J, Wang H, Cheng Q, Penty R, Fainman Y and Pan S (2022). "Advances in cost-effective integrated spectrometers", Light, Science & Applications, 07 Jun 2022, 11(1):174. DOI: 10.1038/s41377-022-00853-1
  • +Zhou T, Ma J, Tang M, Li H, Martin M, Baron T, Liu H, Chen S, Sun X and Zhang Z(2022). "Monolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon", ACS Photonics, 2022 9 (12), 3824-3830. DOI: 10.1021/acsphotonics.2c00711
  • +Beckert A, Grimm M, Hermans R, Freeman J, Linfield E, Davies A, Müller M, Sigg H, Gerber S, Matmon G and Aeppli G (2022). "Precise determination of the low-energy electronuclear Hamiltonian of LiY1−xHoxF4", Physical Review B, 106, 115119. DOI: 10.1103/PhysRevB.106.115119
  • +Tough E, Fice M, Carpintero G, Renaud C, Seeds A and Balakier K (2022). "InP integrated optical frequency comb generator using an amplified recirculating loop", Optics Express, 30 (24), pp. 43195-43208. DOI: 10.1364/OE.469942
  •  *Deng H, Jarvis L, Li Z, Liu Z, Tang M, Li K, Yang J, Maglio B, Shutts S, Yu J, Wang L, Chen S, Jin C, Seeds A, Liu H and Smowton P (2022). "The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers", Journal of Physics D: Applied Physics55(21), article number: 215105. DOI: 10.1088/1361-6463/ac55c4
  • +Jia HYang JTang MLi WJurczak PYu XZhou TPark JLi KDeng H, Yu X, Li A, Chen S, Seeds A and Liu H (2022), "The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix", Journal of Physics D: Applied Physics, 55 494002. DOI: 10.1088/1361-6463/ac95a3
  • +Lu YHu XTang MCao VYan JWu DPark JLiu HXiao X and Chen S (2022). "Analysis of the regimes of feedback effects in quantum dot laser", Journal of Physics D: Applied Physics, 55 484003. DOI: 10.1088/1361-6463/ac9689
  • *Liu JTang MDeng HShutts SWang LSmowton PJin CChen SSeeds A and Liu H (2022). "Theoretical analysis and modelling of degradation for III–V lasers on Si", Journal of Physics D: Applied Physics55 404006. DOI: 10.1088/1361-6463/ac83d3

  • *Pan S, Zhang H, Liu Z, Liao M, Tang M, Wu D, Hu X, Yan J, Wang L, Guo M, Wang Z, Wang T, Smowton P, Seeds A, Liu H, Xiao X and Chen S (2022). "Multi-wavelength 128 Gbit s−1λ−1 PAM4 optical transmission enabled by a 100 GHz quantum dot mode-locked optical frequency comb", Journal of Physics D: Applied Physics 55(14), article number: 144001. DOI: 10.1088/1361-6463/ac4365
  • *Cao V, Park J, Tang M, Zhou T, Seeds A, Chen S and Liu H (2022). "Recent progress of quantum dot lasers monolithically integrated on Si platform", Frontiers in Physics 10 (2022). DOI: 10.3389/fphy.2022.839953
  • Seddon J, Natrella M, Lin X, Graham C, Renaud C, and Seeds A (2022). "Photodiodes for Terahertz Applications", IEEE Journal of Selected Topics in Quantum Electronics, Volume: 28, Issue: 2: Optical Detectors, March-April 2022. DOI: 10.1109/JSTQE.2021.3108954
  • +Huang Y, Zhou T, Tang M, Xiang G, Li H, Martin M, Baron T and Zhang Z (2022). "Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates", Chinese Optics Letters 20.4 (2022): 041401. DOI: 10.3788/COL202220.041401
  • *Mahoney J, Tang M, Liu H and Abadia N (2022) "Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers", Optics Express 30.11 (2022): 17730-17738. DOI: 10.1364/OE.455491
  • +Yao C, Cheng Q, Roelkens G and Penty R (2022). "Bridging the Gap between Resonance and Adiabaticity: A Compact and Highly Tolerant Vertical Coupling Structure", Photonics Research 10(9): 2081-2090. DOI: 10.1364/PRJ.465765
  • +Zhou T, Tang M, Li H, Zhang Z, Cui Y, Park J, Martin M, Baron T, Chen S, Liu H and Zhang Z (2022) "Single-Mode Photonic Crystal Nanobeam Lasers Monolithically Grown on Si for Dense Integration", IEEE Journal of Selected Topics in QuantumElectronics, vol. 28, issue 3, id. 3133546, May 2022. DOI: 10.1109/JSTQE.2021.3133546
  • *Hou Y, Jia H, Tang M, Mosberg A, Ramasse Q, Skandalos I, Noori Y, Yang J, Liu H, Seeds A and Gardes F (2022) "A thermally erasable silicon oxide layer for molecular beam epitaxy", Journal of Physics D: Applied Physics, 55(42). DOI: 10.1088/1361-6463/ac8600
  • Hou Y and Jung Y (2022)  "Spatially and spectrally resolved multicore optical fibre sensor with polarization sensitivity", AIP advances, 12, 065023. DOI: 10.1063/5.0095297
  • +Gardes F, Shooa A, De Paoli G, Skandalos I, Ilie S, Rutirawut T, Talataisong W, Faneca J, Vitali V, Hou Y, Bucio T, Zeimpekis I, Lacava C and Petropoulos P (2022). "A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits", Sensors, 22(11), 4227 (2022). DOI: 10.3390/s22114227
  • ^Hou Y, Kappers M, Jin C and Oliver R (2022) "Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN", Applied Physics Letter, 120, 202101 (2022). DOI: 10.1063/5.0094454

2021

  • +Li Z, Shutts S, Xue Y, Luo W, Lau K and Smowton P (2021). "Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate". Applied Physics Letters 118, article number: 131101. DOI: 10.1063/5.0043815
  • *Yang J, Liu Z, Jurczak P, Tang M, Li K, Pan S, Sanchez A, Beanland R, Zhang J, Wang H, Liu F, Li Z, Shutts S, Smowton P, Chen S, Seeds A and Liu H (2021). "All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates". Journal of Physics D: Applied Physics 54(3), article number: 35103. DOI: 10.1088/1361-6463/abbb49
  • +Matin P, Wu J, Liu H, Seddon J and Seeds A (2021). "Modeling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ = 1.55 μm) Based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-Matched to InP", IEEE Journal of Quantum Electronics, vol. 57, no. 4, pp. 1-10, Aug. 2021, Art no. 5200110. DOI: 10.1109/JQE.2021.3087327
  • *Park J, Tang M, Chen S and Liu H (2021). "Monolithic III–V quantum dot lasers on silicon", Frontiers of Nanoscience 20 (2021): 353-388. DOI: 10.1016/B978-0-12-822083-2.00009-5
  • *Papatryfonos K, Angelova T, Brimont A, Reid B, Guldin S, Smith P, Tang M, Li K, Seeds A, Liu H and Selviah D (2021). "Refractive indices of MBE-grown AlxGa(1− x)As ternary alloys in the transparent wavelength region", AIP Advances 11.2 (2021): 025327. DOI: 10.1063/5.0039631
  • *Papatryfonos K, Selviah D, Maman A, Hasharoni K, Brimont A, Zanzi A, Kraft J, Sidorov V, Seifried M, Baumgartner Y, Horst F, Offrein B, Lawniczuk K, Broeke R, Terzenidis N, Mourgias-Alexandris G, Tang M, Seeds A, Liu H, Sanchis P, Moralis-Pegios M, Manolis T, Pleros N, Vyrsokinos K, Sirbu B, Eichhammer Y, Oppermann H and Tekin T (2021). "Co-package technology platform for low-power and low-cost data centers", Applied Sciences 11.13 (2021): 6098. DOI: 10.3390/app11136098
  • +Muqaddas A, Tessinari R, Casellas R, Garrich M, Hugues-Salas E, de Dios Ó, Luque L, Giorgetti A, Sgambelluri A, Cugini F, Moreno-Muro F, Morro R, Farrow K, Wonfor A, Channegowda M, Pavón-Mariño P, Lord A, Nejabati R and Simeonidou D, "NFV orchestration over disaggregated metro optical networks with end-to-end multi-layer slicing enabling crowdsourced live video streaming", Journal of Optical Communications and Networking, 13, D68-D79 (2021). DOI: 10.1364/JOCN.423501
  • *Gonzalez-Guerrero L, Gonzalez-Guerrero L, Shams H, Fatadin I, Wu J, Fice M, Naftaly M, Seeds A and Renaud C (2021). "Pilot-Tone Assisted 16-QAM Photonic Wireless Bridge Operating At 250 GHz," Journal of Lightwave Technology, vol. 39, no. 9, pp. 2725-2736. DOI: 10.1109/JLT.2021.3053616.

2020

  • *Park J, Tang M, Chen S and Liu H (2020). "Heteroepitaxial growth of III-V semiconductors on silicon", Crystals 10.12 (2020): 1163. DOI: 10.3390/cryst10121163
  • *+Pan S, Huang J, Zhou Z, Liu Z, Ponnampalam L, Liu Z, Tang M, Lo M, Cao Z, Nishi K, Takemasa K, Sugawara M, Penty R, White I, Seeds A, Liu H and Chen S (2020). "Quantum dot mode-locked frequency comb with ultra-stable 25.5  GHz spacing between 20°C and 120°C"Photonics Research. 8, 1937-1942 (2020). DOI: 10.1364/PRJ.399957